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SIR-320ST3F
Sensors
Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
marking it ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Dimensions (Unit : mm)
φ 3.8 ± 0.3
φ 3.1 ± 0.2
Notes:
1. Unspecified tolerance
shall be ± 0.2.
2. Dimension in parenthesis are
Features
1) Compact ( φ 3.1mm).
2) High efficiency, high output P O = 9.0mW (I F = 50mA).
3) Wide radiation angle θ=± 18deg.
4) Emission spectrum well suited to silicon detectors
( λ P = 940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
Absolute maximum ratings (Ta = 25 ° C)
4 ? 0.6
2 ? 0.5
1
(2.5)
2
show for reference.
1 Anode
2 Cathode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
75
5
100
0.5
? 25 to + 85
? 40 to + 85
Unit
mA
V
mW
A
° C
° C
? Pulse width = 0.1msec, duty ratio 1%
Rev.B
1/3
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